■XP152A12C0MR-G GENERAL DESCRIPTION
The XP152A12C0MR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in.The small SOT-23 package makes high density mounting possible.

■XP152A12C0MR-G FEATURES
●Low On-State Resistance
   : Rds(on) = 0.3Ω@ Vgs = -4.5V
   : Rds(on) = 0.5Ω@ Vgs = -2.5V
●Ultra High-Speed Switching
●Gate Protect Diode Built-in
●Driving Voltage : -2.5V
●P-Channel Power MOSFET
●DMOS Structure
●Small Package : SOT-23
●Environmentally Friendly  : EU RoHS Compliant, Pb Free

■XP152A12C0MR-G APPLICATIONS
●Notebook PCs
●Cellular and portable phones
●On-board power supplies
●Li-ion battery systems